SDF06N60 Specs and Replacement
Type Designator: SDF06N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 83 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO220F
SDF06N60 substitution
SDF06N60 datasheet
sdf06n60 sdp06n60.pdf
SDP06N60 SDF06N60 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 600V 6A 1.3 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Mar... See More ⇒
Detailed specifications: FQA170N06 , FQA19N60 , SDF07N50T , FQA24N60 , SDF07N50 , FQA27N25 , FQA28N15 , FQA30N40 , IRFP250 , FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 , FQA62N25C .
History: FQA19N60
Keywords - SDF06N60 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FQA19N60
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