All MOSFET. SDF06N60 Datasheet

 

SDF06N60 Datasheet and Replacement


   Type Designator: SDF06N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Qg ⓘ - Total Gate Charge: 18 nC
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220F
 

 SDF06N60 substitution

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SDF06N60 Datasheet (PDF)

 ..1. Size:188K  samhop
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SDF06N60

SDP06N60SDF06N60aS mHop Microelectronics C orp.Ver 2.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.600V 6A 1.3 @ VGS=10V TO-220 and TO-220F Package.DG D S G D S GSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package Mar

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