All MOSFET. NCE4525 Datasheet

 

NCE4525 Datasheet and Replacement


   Type Designator: NCE4525
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOP8
      - MOSFET Cross-Reference Search

 

NCE4525 Datasheet (PDF)

 ..1. Size:538K  ncepower
nce4525.pdf pdf_icon

NCE4525

Pb Free Producthttp://www.ncepower.com NCE4525N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

 8.1. Size:627K  ncepower
nce4528k.pdf pdf_icon

NCE4525

NCE4528Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4528K uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.Schematic diagramGeneral Features N-ChannelV =45V,I =28ADS DR

 9.1. Size:434K  ncepower
nce4558k.pdf pdf_icon

NCE4525

Pb Free ProductNCE4558Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)

 9.2. Size:623K  ncepower
nce4555k.pdf pdf_icon

NCE4525

Pb Free ProductNCE4555Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4555K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =45V,I =55ADS DSchematic diagramR =9.2m @ V =10V (Typ)DS(ON) GSR =13m @ V =4.5V (Typ)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP03N70H-H-HF | HLML6401 | CED20N02 | FQB11N40CTM | FQPF7N65C | IPW60R170CFD7 | AP85T03GH-HF

Keywords - NCE4525 MOSFET datasheet

 NCE4525 cross reference
 NCE4525 equivalent finder
 NCE4525 lookup
 NCE4525 substitution
 NCE4525 replacement

 

 
Back to Top

 


 
.