All MOSFET. NCE4525 Datasheet

 

NCE4525 Datasheet and Replacement


   Type Designator: NCE4525
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOP8
 

 NCE4525 substitution

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NCE4525 Datasheet (PDF)

 ..1. Size:538K  ncepower
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NCE4525

Pb Free Producthttp://www.ncepower.com NCE4525N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

 8.1. Size:627K  ncepower
nce4528k.pdf pdf_icon

NCE4525

NCE4528Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4528K uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.Schematic diagramGeneral Features N-ChannelV =45V,I =28ADS DR

 9.1. Size:434K  ncepower
nce4558k.pdf pdf_icon

NCE4525

Pb Free ProductNCE4558Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)

 9.2. Size:623K  ncepower
nce4555k.pdf pdf_icon

NCE4525

Pb Free ProductNCE4555Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4555K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =45V,I =55ADS DSchematic diagramR =9.2m @ V =10V (Typ)DS(ON) GSR =13m @ V =4.5V (Typ)

Datasheet: NCE40P15Q , NCE40P20Q , NCE40P20Q1 , NCE40P25G , NCE40P30K , NCE40P40D , NCE4435B , NCE4435X , IRF840 , NCE4528K , NCE4555K , NCE4558K , NCE4606B , NCE5015S , NCE5020Q , NCE5055K , NCE5080K .

History: SWD056R68E7T | APT1004R2KN

Keywords - NCE4525 MOSFET datasheet

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