NCE4525 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE4525
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8.9 nC
Время нарастания (tr): 2.5 ns
Выходная емкость (Cd): 82 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.038 Ohm
Тип корпуса: SOP8
NCE4525 Datasheet (PDF)
nce4525.pdf
Pb Free Producthttp://www.ncepower.com NCE4525N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =
nce4528k.pdf
NCE4528Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4528K uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.Schematic diagramGeneral Features N-ChannelV =45V,I =28ADS DR
nce4558k.pdf
Pb Free ProductNCE4558Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)
nce4555k.pdf
Pb Free ProductNCE4555Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4555K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =45V,I =55ADS DSchematic diagramR =9.2m @ V =10V (Typ)DS(ON) GSR =13m @ V =4.5V (Typ)
nce4503s.pdf
Pb Free Producthttp://www.ncepower.com NCE4503SN and P-Channel Enhancement Mode Power MOSFET Description The NCE4503S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel
nce4503s.pdf
NCE4503Swww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 11 100 % Rg and UIS TestedN-Channel 30 13.3 Compliant to RoHS Directive 2002/95/EC0.013 at VGS = 4.5 V 10APPLICATIONS0.021 at VGS = - 10 V
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
