Справочник MOSFET. NCE4525

 

NCE4525 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE4525
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 2.5 ns
   Cossⓘ - Выходная емкость: 82 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
   Тип корпуса: SOP8
     - подбор MOSFET транзистора по параметрам

 

NCE4525 Datasheet (PDF)

 ..1. Size:538K  ncepower
nce4525.pdfpdf_icon

NCE4525

Pb Free Producthttp://www.ncepower.com NCE4525N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

 8.1. Size:627K  ncepower
nce4528k.pdfpdf_icon

NCE4525

NCE4528Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4528K uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.Schematic diagramGeneral Features N-ChannelV =45V,I =28ADS DR

 9.1. Size:434K  ncepower
nce4558k.pdfpdf_icon

NCE4525

Pb Free ProductNCE4558Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)

 9.2. Size:623K  ncepower
nce4555k.pdfpdf_icon

NCE4525

Pb Free ProductNCE4555Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4555K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =45V,I =55ADS DSchematic diagramR =9.2m @ V =10V (Typ)DS(ON) GSR =13m @ V =4.5V (Typ)

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History: CP650 | WM02N08L | IRF8301M

 

 
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