NCE4558K Specs and Replacement

Type Designator: NCE4558K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 182 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-252

NCE4558K substitution

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NCE4558K datasheet

 ..1. Size:434K  ncepower
 nce4558k.pdf pdf_icon

NCE4558K

Pb Free Product NCE4558K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON) ... See More ⇒

 8.1. Size:623K  ncepower
 nce4555k.pdf pdf_icon

NCE4558K

Pb Free Product NCE4555K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4555K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =45V,I =55A DS D Schematic diagram R =9.2m @ V =10V (Typ) DS(ON) GS R =13m @ V =4.5V (Typ) ... See More ⇒

 9.1. Size:538K  ncepower
 nce4525.pdf pdf_icon

NCE4558K

Pb Free Product http //www.ncepower.com NCE4525 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = ... See More ⇒

 9.2. Size:627K  ncepower
 nce4528k.pdf pdf_icon

NCE4558K

NCE4528K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4528K uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel V =45V,I =28A DS D R ... See More ⇒

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Detailed specifications: NCE40P25G, NCE40P30K, NCE40P40D, NCE4435B, NCE4435X, NCE4525, NCE4528K, NCE4555K, IRF540, NCE4606B, NCE5015S, NCE5020Q, NCE5055K, NCE5080K, NCE50N1K2K, NCE50N1K8D, NCE50N1K8F

Keywords - NCE4558K MOSFET specs

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