All MOSFET. NCE4558K Datasheet

 

NCE4558K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE4558K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 36.8 nC
   trⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-252

 NCE4558K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE4558K Datasheet (PDF)

 ..1. Size:434K  ncepower
 nce4558k.pdf

NCE4558K NCE4558K

Pb Free ProductNCE4558Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)

 8.1. Size:623K  ncepower
 nce4555k.pdf

NCE4558K NCE4558K

Pb Free ProductNCE4555Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4555K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =45V,I =55ADS DSchematic diagramR =9.2m @ V =10V (Typ)DS(ON) GSR =13m @ V =4.5V (Typ)

 9.1. Size:538K  ncepower
 nce4525.pdf

NCE4558K NCE4558K

Pb Free Producthttp://www.ncepower.com NCE4525N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

 9.2. Size:627K  ncepower
 nce4528k.pdf

NCE4558K NCE4558K

NCE4528Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4528K uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.Schematic diagramGeneral Features N-ChannelV =45V,I =28ADS DR

 9.3. Size:461K  ncepower
 nce4503s.pdf

NCE4558K NCE4558K

Pb Free Producthttp://www.ncepower.com NCE4503SN and P-Channel Enhancement Mode Power MOSFET Description The NCE4503S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel

 9.4. Size:996K  cn vbsemi
 nce4503s.pdf

NCE4558K NCE4558K

NCE4503Swww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 11 100 % Rg and UIS TestedN-Channel 30 13.3 Compliant to RoHS Directive 2002/95/EC0.013 at VGS = 4.5 V 10APPLICATIONS0.021 at VGS = - 10 V

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQPF6N90C | FQP9N30

 

 
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