NCE4558K - описание и поиск аналогов

Pb Free Product NCE4558K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)

Pb Free Product NCE4555K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4555K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =45V,I =55A DS D Schematic diagram R =9.2m @ V =10V (Typ) DS(ON) GS R =13m @ V =4.5V (Typ)

Pb Free Product http //www.ncepower.com NCE4525 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

NCE4528K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4528K uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel V =45V,I =28A DS D R

Pb Free Product http //www.ncepower.com NCE4503S N and P-Channel Enhancement Mode Power MOSFET Description The NCE4503S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel

NCE4503S www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = 10 V 11 100 % Rg and UIS Tested N-Channel 30 13.3 Compliant to RoHS Directive 2002/95/EC 0.013 at VGS = 4.5 V 10 APPLICATIONS 0.021 at VGS = - 10 V