NCE4558K Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE4558K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 17.2 ns
Cossⓘ - Выходная емкость: 182 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCE4558K
NCE4558K Datasheet (PDF)
nce4558k.pdf

Pb Free ProductNCE4558Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)
nce4555k.pdf

Pb Free ProductNCE4555Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4555K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =45V,I =55ADS DSchematic diagramR =9.2m @ V =10V (Typ)DS(ON) GSR =13m @ V =4.5V (Typ)
nce4525.pdf

Pb Free Producthttp://www.ncepower.com NCE4525N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =
nce4528k.pdf

NCE4528Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4528K uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.Schematic diagramGeneral Features N-ChannelV =45V,I =28ADS DR
Другие MOSFET... NCE40P25G , NCE40P30K , NCE40P40D , NCE4435B , NCE4435X , NCE4525 , NCE4528K , NCE4555K , IRF540N , NCE4606B , NCE5015S , NCE5020Q , NCE5055K , NCE5080K , NCE50N1K2K , NCE50N1K8D , NCE50N1K8F .



Список транзисторов
Обновления
MOSFET: JMH65R190PSFD | JMH65R190PFFD | JMH65R190PEFD | JMH65R190PCFD | JMH65R190AW | JMH65R190AS | JMH65R190APLNFD | JMH65R190APLN | JMH65R190AFFD | JMH65R190AF | JMH65R190AE | JMH65R190ACFP | JMH65R190ACFDQ | JMH65R190AC | JMSH1509PG | JMSH1509PE
Popular searches
2sa733 replacement | 2n3906 transistor equivalent | 2sc4883 | tip31a datasheet | d882 datasheet | tip29 transistor | s9014 transistor datasheet | 2sa1491