All MOSFET. NCE50N1K8K Datasheet

 

NCE50N1K8K Datasheet and Replacement


   Type Designator: NCE50N1K8K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-252
 

 NCE50N1K8K substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE50N1K8K Datasheet (PDF)

 ..1. Size:807K  ncepower
 nce50n1k8k.pdf pdf_icon

NCE50N1K8K

NCE50N1K8KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.1. Size:820K  ncepower
 nce50n1k8f.pdf pdf_icon

NCE50N1K8K

NCE50N1K8FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.2. Size:823K  ncepower
 nce50n1k8i.pdf pdf_icon

NCE50N1K8K

NCE50N1K8IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.3. Size:838K  ncepower
 nce50n1k8d.pdf pdf_icon

NCE50N1K8K

NCE50N1K8DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

SHOW MORE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - NCE50N1K8K MOSFET datasheet

 NCE50N1K8K cross reference
 NCE50N1K8K equivalent finder
 NCE50N1K8K lookup
 NCE50N1K8K substitution
 NCE50N1K8K replacement

 

 
Back to Top

 


 
.