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NCE50N1K8K Specs and Replacement


   Type Designator: NCE50N1K8K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-252
 

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NCE50N1K8K datasheet

 ..1. Size:807K  ncepower
 nce50n1k8k.pdf pdf_icon

NCE50N1K8K

NCE50N1K8K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind... See More ⇒

 5.1. Size:820K  ncepower
 nce50n1k8f.pdf pdf_icon

NCE50N1K8K

NCE50N1K8F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind... See More ⇒

 5.2. Size:823K  ncepower
 nce50n1k8i.pdf pdf_icon

NCE50N1K8K

NCE50N1K8I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind... See More ⇒

 5.3. Size:838K  ncepower
 nce50n1k8d.pdf pdf_icon

NCE50N1K8K

NCE50N1K8D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind... See More ⇒

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Detailed specifications: NCE5015S , NCE5020Q , NCE5055K , NCE5080K , NCE50N1K2K , NCE50N1K8D , NCE50N1K8F , NCE50N1K8I , AO3400 , NCE50N1K8R , NCE50N2K2D , NCE50N2K2F , NCE50N2K2I , NCE50N2K2K , NCE50N2K2R , NCE50N540K , NCE50NF130D .

Keywords - NCE50N1K8K MOSFET specs

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