NCE50N1K8R Specs and Replacement

Type Designator: NCE50N1K8R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: SOT223

NCE50N1K8R substitution

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NCE50N1K8R datasheet

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NCE50N1K8R

NCE50N1K8R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind... See More ⇒

 5.1. Size:820K  ncepower
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NCE50N1K8R

NCE50N1K8F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind... See More ⇒

 5.2. Size:807K  ncepower
 nce50n1k8k.pdf pdf_icon

NCE50N1K8R

NCE50N1K8K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind... See More ⇒

 5.3. Size:823K  ncepower
 nce50n1k8i.pdf pdf_icon

NCE50N1K8R

NCE50N1K8I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind... See More ⇒

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Detailed specifications: NCE5020Q, NCE5055K, NCE5080K, NCE50N1K2K, NCE50N1K8D, NCE50N1K8F, NCE50N1K8I, NCE50N1K8K, IRFB4227, NCE50N2K2D, NCE50N2K2F, NCE50N2K2I, NCE50N2K2K, NCE50N2K2R, NCE50N540K, NCE50NF130D, NCE50NF130F

Keywords - NCE50N1K8R MOSFET specs

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