All MOSFET. NCE50N1K8R Datasheet

 

NCE50N1K8R Datasheet and Replacement


   Type Designator: NCE50N1K8R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: SOT223
 

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NCE50N1K8R Datasheet (PDF)

 ..1. Size:820K  ncepower
 nce50n1k8r.pdf pdf_icon

NCE50N1K8R

NCE50N1K8RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.1. Size:820K  ncepower
 nce50n1k8f.pdf pdf_icon

NCE50N1K8R

NCE50N1K8FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.2. Size:807K  ncepower
 nce50n1k8k.pdf pdf_icon

NCE50N1K8R

NCE50N1K8KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.3. Size:823K  ncepower
 nce50n1k8i.pdf pdf_icon

NCE50N1K8R

NCE50N1K8IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

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Datasheet: NCE5020Q , NCE5055K , NCE5080K , NCE50N1K2K , NCE50N1K8D , NCE50N1K8F , NCE50N1K8I , NCE50N1K8K , AON6414A , NCE50N2K2D , NCE50N2K2F , NCE50N2K2I , NCE50N2K2K , NCE50N2K2R , NCE50N540K , NCE50NF130D , NCE50NF130F .

History: 2SK2541 | SIHF30N60E

Keywords - NCE50N1K8R MOSFET datasheet

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