Справочник MOSFET. NCE50N1K8R

 

NCE50N1K8R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE50N1K8R
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 4.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 11 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для NCE50N1K8R

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE50N1K8R Datasheet (PDF)

 ..1. Size:820K  ncepower
 nce50n1k8r.pdf pdf_icon

NCE50N1K8R

NCE50N1K8RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.1. Size:820K  ncepower
 nce50n1k8f.pdf pdf_icon

NCE50N1K8R

NCE50N1K8FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.2. Size:807K  ncepower
 nce50n1k8k.pdf pdf_icon

NCE50N1K8R

NCE50N1K8KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.3. Size:823K  ncepower
 nce50n1k8i.pdf pdf_icon

NCE50N1K8R

NCE50N1K8IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE5020Q , NCE5055K , NCE5080K , NCE50N1K2K , NCE50N1K8D , NCE50N1K8F , NCE50N1K8I , NCE50N1K8K , AON6414A , NCE50N2K2D , NCE50N2K2F , NCE50N2K2I , NCE50N2K2K , NCE50N2K2R , NCE50N540K , NCE50NF130D , NCE50NF130F .

History: AP4409GEP | LP4101LT1G | PJA3431 | SPA16N50C3 | PA504EV | IPD50N04S4-08 | IPD220N06L3G

 

 
Back to Top

 


 
.