NCE50N1K8R. Аналоги и основные параметры

Наименование производителя: NCE50N1K8R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 4.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5.5 ns

Cossⓘ - Выходная емкость: 11 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm

Тип корпуса: SOT223

Аналог (замена) для NCE50N1K8R

- подборⓘ MOSFET транзистора по параметрам

 

NCE50N1K8R даташит

 ..1. Size:820K  ncepower
 nce50n1k8r.pdf pdf_icon

NCE50N1K8R

NCE50N1K8R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 5.1. Size:820K  ncepower
 nce50n1k8f.pdf pdf_icon

NCE50N1K8R

NCE50N1K8F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 5.2. Size:807K  ncepower
 nce50n1k8k.pdf pdf_icon

NCE50N1K8R

NCE50N1K8K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 5.3. Size:823K  ncepower
 nce50n1k8i.pdf pdf_icon

NCE50N1K8R

NCE50N1K8I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

ПОКАЗАТЬ ЕЩЁ

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