All MOSFET. NCE50N2K2K Datasheet

 

NCE50N2K2K Datasheet and Replacement


   Type Designator: NCE50N2K2K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 4.2 nC
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 8.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.25 Ohm
   Package: TO-252
 

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NCE50N2K2K Datasheet (PDF)

 ..1. Size:712K  ncepower
 nce50n2k2k.pdf pdf_icon

NCE50N2K2K

NCE50N2K2KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

 5.1. Size:760K  ncepower
 nce50n2k2f.pdf pdf_icon

NCE50N2K2K

NCE50N2K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

 5.2. Size:753K  ncepower
 nce50n2k2r.pdf pdf_icon

NCE50N2K2K

NCE50N2K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

 5.3. Size:705K  ncepower
 nce50n2k2i.pdf pdf_icon

NCE50N2K2K

NCE50N2K2IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

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Datasheet: NCE50N1K8D , NCE50N1K8F , NCE50N1K8I , NCE50N1K8K , NCE50N1K8R , NCE50N2K2D , NCE50N2K2F , NCE50N2K2I , IRFP250N , NCE50N2K2R , NCE50N540K , NCE50NF130D , NCE50NF130F , NCE50NF130K , NCE50NF130LL , NCE50NF130T , NCE50NF130V .

History: NCE50N2K2R

Keywords - NCE50N2K2K MOSFET datasheet

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