NCE50N2K2K Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE50N2K2K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 18 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
Tj ⓘ - Максимальная температура канала: 175 °C
Qg ⓘ - Общий заряд затвора: 4.2 nC
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 8.6 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.25 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCE50N2K2K
NCE50N2K2K Datasheet (PDF)
nce50n2k2k.pdf

NCE50N2K2KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind
nce50n2k2f.pdf

NCE50N2K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind
nce50n2k2r.pdf

NCE50N2K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind
nce50n2k2i.pdf

NCE50N2K2IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind
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