NCE50N2K2R Specs and Replacement

Type Designator: NCE50N2K2R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 8.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.25 Ohm

Package: SOT223

NCE50N2K2R substitution

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NCE50N2K2R datasheet

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 nce50n2k2r.pdf pdf_icon

NCE50N2K2R

NCE50N2K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind... See More ⇒

 5.1. Size:760K  ncepower
 nce50n2k2f.pdf pdf_icon

NCE50N2K2R

NCE50N2K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind... See More ⇒

 5.2. Size:705K  ncepower
 nce50n2k2i.pdf pdf_icon

NCE50N2K2R

NCE50N2K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind... See More ⇒

 5.3. Size:741K  ncepower
 nce50n2k2d.pdf pdf_icon

NCE50N2K2R

NCE50N2K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind... See More ⇒

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Detailed specifications: NCE50N1K8F, NCE50N1K8I, NCE50N1K8K, NCE50N1K8R, NCE50N2K2D, NCE50N2K2F, NCE50N2K2I, NCE50N2K2K, 2N7000, NCE50N540K, NCE50NF130D, NCE50NF130F, NCE50NF130K, NCE50NF130LL, NCE50NF130T, NCE50NF130V, NCE50NF180

Keywords - NCE50N2K2R MOSFET specs

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