Справочник MOSFET. NCE50N2K2R

 

NCE50N2K2R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE50N2K2R
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 4.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 8.6 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.25 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для NCE50N2K2R

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE50N2K2R Datasheet (PDF)

 ..1. Size:753K  ncepower
 nce50n2k2r.pdf pdf_icon

NCE50N2K2R

NCE50N2K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

 5.1. Size:760K  ncepower
 nce50n2k2f.pdf pdf_icon

NCE50N2K2R

NCE50N2K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

 5.2. Size:705K  ncepower
 nce50n2k2i.pdf pdf_icon

NCE50N2K2R

NCE50N2K2IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

 5.3. Size:741K  ncepower
 nce50n2k2d.pdf pdf_icon

NCE50N2K2R

NCE50N2K2DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE50N1K8F , NCE50N1K8I , NCE50N1K8K , NCE50N1K8R , NCE50N2K2D , NCE50N2K2F , NCE50N2K2I , NCE50N2K2K , IRF9540 , NCE50N540K , NCE50NF130D , NCE50NF130F , NCE50NF130K , NCE50NF130LL , NCE50NF130T , NCE50NF130V , NCE50NF180 .

History: APTC60AM35SCTG | SQM120N08-05 | RTL035N03

 

 
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