All MOSFET. NCE50NF130D Datasheet

 

NCE50NF130D Datasheet and Replacement


   Type Designator: NCE50NF130D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 186 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 23.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 24.5 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO263
 

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NCE50NF130D Datasheet (PDF)

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NCE50NF130D

NCE50NF130DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.1. Size:716K  ncepower
 nce50nf130v.pdf pdf_icon

NCE50NF130D

NCE50NF130VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.2. Size:712K  ncepower
 nce50nf130f.pdf pdf_icon

NCE50NF130D

NCE50NF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.3. Size:722K  ncepower
 nce50nf130k.pdf pdf_icon

NCE50NF130D

NCE50NF130KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

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Datasheet: NCE50N1K8K , NCE50N1K8R , NCE50N2K2D , NCE50N2K2F , NCE50N2K2I , NCE50N2K2K , NCE50N2K2R , NCE50N540K , 2SK3878 , NCE50NF130F , NCE50NF130K , NCE50NF130LL , NCE50NF130T , NCE50NF130V , NCE50NF180 , NCE50NF180D , NCE50NF180F .

History: INK0012AM1 | 2SK3572-ZK

Keywords - NCE50NF130D MOSFET datasheet

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