Справочник MOSFET. NCE50NF130D

 

NCE50NF130D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE50NF130D
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 186 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 23.5 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 24.5 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 630 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.13 Ohm
   Тип корпуса: TO263

 Аналог (замена) для NCE50NF130D

 

 

NCE50NF130D Datasheet (PDF)

 ..1. Size:728K  ncepower
 nce50nf130d.pdf

NCE50NF130D NCE50NF130D

NCE50NF130DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.1. Size:716K  ncepower
 nce50nf130v.pdf

NCE50NF130D NCE50NF130D

NCE50NF130VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.2. Size:712K  ncepower
 nce50nf130f.pdf

NCE50NF130D NCE50NF130D

NCE50NF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.3. Size:722K  ncepower
 nce50nf130k.pdf

NCE50NF130D NCE50NF130D

NCE50NF130KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.4. Size:744K  ncepower
 nce50nf130ll.pdf

NCE50NF130D NCE50NF130D

NCE50NF130LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and

 4.5. Size:737K  ncepower
 nce50nf130t.pdf

NCE50NF130D NCE50NF130D

NCE50NF130TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

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History: STB25NM60N | STB42N65M5 | SVS20N60SD2

 

 
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