All MOSFET. FQA44N30 Datasheet

 

FQA44N30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQA44N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 43.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: TO3PN

 FQA44N30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA44N30 Datasheet (PDF)

 ..1. Size:754K  fairchild semi
 fqa44n30.pdf

FQA44N30 FQA44N30

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 300V, RDS(on) = 0.069 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 120 nC)planar stripe, DMOS technology. Low Crss ( typical 75 pF)This advanced technology has be

 ..2. Size:2264K  onsemi
 fqa44n30.pdf

FQA44N30 FQA44N30

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:569K  fairchild semi
 fqa44n10.pdf

FQA44N30 FQA44N30

December 2000TMQFETQFETQFETQFETFQA44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is espe

 8.2. Size:663K  fairchild semi
 fqa44n08.pdf

FQA44N30 FQA44N30

August 2000TMQFETQFETQFETQFETFQA44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 49.8A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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