FQA44N30 PDF and Equivalents Search

 

FQA44N30 Specs and Replacement

Type Designator: FQA44N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 43.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: TO3PN

FQA44N30 substitution

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FQA44N30 datasheet

 ..1. Size:754K  fairchild semi
fqa44n30.pdf pdf_icon

FQA44N30

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 43.5A, 300V, RDS(on) = 0.069 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 120 nC) planar stripe, DMOS technology. Low Crss ( typical 75 pF) This advanced technology has be... See More ⇒

 ..2. Size:2264K  onsemi
fqa44n30.pdf pdf_icon

FQA44N30

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:569K  fairchild semi
fqa44n10.pdf pdf_icon

FQA44N30

December 2000 TM QFET QFET QFET QFET FQA44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is espe... See More ⇒

 8.2. Size:663K  fairchild semi
fqa44n08.pdf pdf_icon

FQA44N30

August 2000 TM QFET QFET QFET QFET FQA44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 49.8A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been ... See More ⇒

Detailed specifications: FQA27N25, FQA28N15, FQA30N40, SDF06N60, FQA32N20C, SDF05N50, FQA36P15, FQA40N25, RFP50N06, FQA46N15, FQA55N25, FQA62N25C, FQA65N20, SDF05N40T, FQA6N90CF109, FQA70N10, SDF04N65

Keywords - FQA44N30 MOSFET specs

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