FQA44N30 - аналоги, параметры транзистора - Справочник транзисторов

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April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 43.5A, 300V, RDS(on) = 0.069 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 120 nC) planar stripe, DMOS technology. Low Crss ( typical 75 pF) This advanced technology has be

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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December 2000 TM QFET QFET QFET QFET FQA44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is espe

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August 2000 TM QFET QFET QFET QFET FQA44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 49.8A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been

Другие MOSFET... FQA27N25 , FQA28N15 , FQA30N40 , SDF06N60 , FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 , RFP50N06 , FQA46N15 , FQA55N25 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90CF109 , FQA70N10 , SDF04N65 .