NCE5520Q Specs and Replacement
Type Designator: NCE5520Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ -
Output Capacitance: 123 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: DFN3X3EP
- MOSFET ⓘ Cross-Reference Search
NCE5520Q datasheet
..1. Size:311K ncepower
nce5520q.pdf 
Pb Free Product http //www.ncepower.com NCE5520Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =20A Schematic diagram RDS(ON) ... See More ⇒
9.1. Size:392K ncepower
nce55p04s.pdf 
Pb Free Product http //www.ncepower.com NCE55P04S NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE55P04S uses advanced trench technology and G1 G2 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2 Schematic diagram General Features VDS =-55V,ID =-4A RDS(ON) ... See More ⇒
9.2. Size:311K ncepower
nce55p15.pdf 
Pb Free Product http //www.ncepower.com NCE55P15 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON) ... See More ⇒
9.3. Size:467K ncepower
nce55p15k.pdf 
Pb Free Product http //www.ncepower.com NCE55P15K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON) ... See More ⇒
9.4. Size:362K ncepower
nce55p15i.pdf 
Pb Free Product http //www.ncepower.com NCE55P15I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON) ... See More ⇒
9.5. Size:325K ncepower
nce55p30.pdf 
Pb Free Product http //www.ncepower.com NCE55P30 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON) ... See More ⇒
9.6. Size:357K ncepower
nce55p05s.pdf 
http //www.ncepower.com NCE55P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON) ... See More ⇒
9.7. Size:456K ncepower
nce55h12.pdf 
Pb Free Product http //www.ncepower.com NCE55H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =120A RDS(ON) ... See More ⇒
9.8. Size:365K ncepower
nce55p30k.pdf 
Pb Free Product http //www.ncepower.com NCE55P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON) ... See More ⇒
9.9. Size:926K cn vbsemi
nce55p04s.pdf 
NCE55P04S www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top V... See More ⇒
9.10. Size:1756K cn vbsemi
nce55p05s.pdf 
NCE55P05S www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.050 RDS(on) ( ) at VGS = -4.5 V 0.060 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAME... See More ⇒
Detailed specifications: NCE50NF520F, NCE50NF520I, NCE50NF520K, NCE50NF600D, NCE50NF600F, NCE50NF600I, NCE50NF600K, NCE50NF600R, STP80NF70, NCE55P15, NCE6003X, NCE6003XM, NCE6003XY, NCE6005AN, NCE6007S, NCE6009XS, NCE6010J
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