NCE5520Q - описание и поиск аналогов

 ..1. Size:311K  ncepower
 nce5520q.pdf 

Pb Free Product http //www.ncepower.com NCE5520Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =20A Schematic diagram RDS(ON)

 9.1. Size:392K  ncepower
 nce55p04s.pdf 

Pb Free Product http //www.ncepower.com NCE55P04S NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE55P04S uses advanced trench technology and G1 G2 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2 Schematic diagram General Features VDS =-55V,ID =-4A RDS(ON)

 9.2. Size:311K  ncepower
 nce55p15.pdf 

Pb Free Product http //www.ncepower.com NCE55P15 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)

 9.3. Size:467K  ncepower
 nce55p15k.pdf 

Pb Free Product http //www.ncepower.com NCE55P15K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)

 9.4. Size:362K  ncepower
 nce55p15i.pdf 

Pb Free Product http //www.ncepower.com NCE55P15I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)

 9.5. Size:325K  ncepower
 nce55p30.pdf 

Pb Free Product http //www.ncepower.com NCE55P30 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

 9.6. Size:357K  ncepower
 nce55p05s.pdf 

http //www.ncepower.com NCE55P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)

 9.7. Size:456K  ncepower
 nce55h12.pdf 

Pb Free Product http //www.ncepower.com NCE55H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =120A RDS(ON)

 9.8. Size:365K  ncepower
 nce55p30k.pdf 

Pb Free Product http //www.ncepower.com NCE55P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

 9.9. Size:926K  cn vbsemi
 nce55p04s.pdf 

NCE55P04S www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top V

 9.10. Size:1756K  cn vbsemi
 nce55p05s.pdf 

NCE55P05S www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.050 RDS(on) ( ) at VGS = -4.5 V 0.060 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAME