All MOSFET. NCE60N1K0D Datasheet

 

NCE60N1K0D MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60N1K0D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1.82 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO263

 NCE60N1K0D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60N1K0D Datasheet (PDF)

 ..1. Size:749K  ncepower
 nce60n1k0d.pdf

NCE60N1K0D NCE60N1K0D

NCE60N1K0DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.1. Size:757K  ncepower
 nce60n1k0r.pdf

NCE60N1K0D NCE60N1K0D

NCE60N1K0RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.2. Size:771K  ncepower
 nce60n1k0i.pdf

NCE60N1K0D NCE60N1K0D

NCE60N1K0IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.3. Size:752K  ncepower
 nce60n1k0k.pdf

NCE60N1K0D NCE60N1K0D

NCE60N1K0KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.4. Size:740K  ncepower
 nce60n1k0f.pdf

NCE60N1K0D NCE60N1K0D

NCE60N1K0FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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