NCE60N1K0D. Аналоги и основные параметры

Наименование производителя: NCE60N1K0D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 47 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.3 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 1.82 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm

Тип корпуса: TO263

Аналог (замена) для NCE60N1K0D

- подборⓘ MOSFET транзистора по параметрам

 

NCE60N1K0D даташит

 ..1. Size:749K  ncepower
 nce60n1k0d.pdf pdf_icon

NCE60N1K0D

NCE60N1K0D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 5.1. Size:757K  ncepower
 nce60n1k0r.pdf pdf_icon

NCE60N1K0D

NCE60N1K0R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 5.2. Size:771K  ncepower
 nce60n1k0i.pdf pdf_icon

NCE60N1K0D

NCE60N1K0I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 5.3. Size:752K  ncepower
 nce60n1k0k.pdf pdf_icon

NCE60N1K0D

NCE60N1K0K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

ПОКАЗАТЬ ЕЩЁ

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