All MOSFET. NCE60N1K0F Datasheet

 

NCE60N1K0F Datasheet and Replacement


   Type Designator: NCE60N1K0F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1.82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F
 

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NCE60N1K0F Datasheet (PDF)

 ..1. Size:740K  ncepower
 nce60n1k0f.pdf pdf_icon

NCE60N1K0F

NCE60N1K0FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.1. Size:749K  ncepower
 nce60n1k0d.pdf pdf_icon

NCE60N1K0F

NCE60N1K0DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.2. Size:757K  ncepower
 nce60n1k0r.pdf pdf_icon

NCE60N1K0F

NCE60N1K0RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.3. Size:771K  ncepower
 nce60n1k0i.pdf pdf_icon

NCE60N1K0F

NCE60N1K0IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

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Datasheet: NCE60H10D , NCE60H10K , NCE60H15AT , NCE60H15T , NCE60H18 , NCE60H28LL , NCE60H30T , NCE60N1K0D , 2N7002 , NCE60N1K0I , NCE60N1K0K , NCE60N1K0R , NCE60N2K1D , NCE60N2K1F , NCE60N2K1I , NCE60N2K1K , NCE60N2K1R .

History: NTBG160N120SC1

Keywords - NCE60N1K0F MOSFET datasheet

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