Справочник MOSFET. NCE60N1K0F

 

NCE60N1K0F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE60N1K0F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.3 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 1.82 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для NCE60N1K0F

 

 

NCE60N1K0F Datasheet (PDF)

 ..1. Size:740K  ncepower
 nce60n1k0f.pdf

NCE60N1K0F NCE60N1K0F

NCE60N1K0FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.1. Size:749K  ncepower
 nce60n1k0d.pdf

NCE60N1K0F NCE60N1K0F

NCE60N1K0DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.2. Size:757K  ncepower
 nce60n1k0r.pdf

NCE60N1K0F NCE60N1K0F

NCE60N1K0RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.3. Size:771K  ncepower
 nce60n1k0i.pdf

NCE60N1K0F NCE60N1K0F

NCE60N1K0IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.4. Size:752K  ncepower
 nce60n1k0k.pdf

NCE60N1K0F NCE60N1K0F

NCE60N1K0KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

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History: PHB4ND40E

 

 
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