NCE60N370K Specs and Replacement

Type Designator: NCE60N370K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 99 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm

Package: TO-252

NCE60N370K substitution

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NCE60N370K datasheet

 ..1. Size:717K  ncepower
 nce60n370k.pdf pdf_icon

NCE60N370K

NCE60N370K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 335 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria... See More ⇒

 7.1. Size:721K  ncepower
 nce60n390f.pdf pdf_icon

NCE60N370K

NCE60N390F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria... See More ⇒

 7.2. Size:730K  ncepower
 nce60n390i.pdf pdf_icon

NCE60N370K

NCE60N390I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria... See More ⇒

 7.3. Size:715K  ncepower
 nce60n390k.pdf pdf_icon

NCE60N370K

NCE60N390K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria... See More ⇒

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Detailed specifications: NCE60N1K0I, NCE60N1K0K, NCE60N1K0R, NCE60N2K1D, NCE60N2K1F, NCE60N2K1I, NCE60N2K1K, NCE60N2K1R, IRF740, NCE60N390, NCE60N390D, NCE60N390F, NCE60N390I, NCE60N390K, NCE60N640, NCE60N640D, NCE60N640F

Keywords - NCE60N370K MOSFET specs

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