NCE60N370K. Аналоги и основные параметры

Наименование производителя: NCE60N370K

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 99 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 32 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.37 Ohm

Тип корпуса: TO-252

Аналог (замена) для NCE60N370K

- подборⓘ MOSFET транзистора по параметрам

 

NCE60N370K даташит

 ..1. Size:717K  ncepower
nce60n370k.pdfpdf_icon

NCE60N370K

NCE60N370K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 335 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 7.1. Size:721K  ncepower
nce60n390f.pdfpdf_icon

NCE60N370K

NCE60N390F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 7.2. Size:730K  ncepower
nce60n390i.pdfpdf_icon

NCE60N370K

NCE60N390I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 7.3. Size:715K  ncepower
nce60n390k.pdfpdf_icon

NCE60N370K

NCE60N390K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

Другие IGBT... NCE60N1K0I, NCE60N1K0K, NCE60N1K0R, NCE60N2K1D, NCE60N2K1F, NCE60N2K1I, NCE60N2K1K, NCE60N2K1R, IRF740, NCE60N390, NCE60N390D, NCE60N390F, NCE60N390I, NCE60N390K, NCE60N640, NCE60N640D, NCE60N640F