All MOSFET. NCE60ND08S Datasheet

 

NCE60ND08S MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60ND08S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38.5 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8

 NCE60ND08S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60ND08S Datasheet (PDF)

 ..1. Size:405K  ncepower
 nce60nd08s.pdf

NCE60ND08S NCE60ND08S

http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR

 6.1. Size:643K  ncepower
 nce60nd03n.pdf

NCE60ND08S NCE60ND08S

http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

 6.2. Size:659K  ncepower
 nce60nd03s.pdf

NCE60ND08S NCE60ND08S

http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

 6.3. Size:416K  ncepower
 nce60nd09as.pdf

NCE60ND08S NCE60ND08S

NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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