Справочник MOSFET. NCE60ND08S

 

NCE60ND08S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60ND08S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 112 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для NCE60ND08S

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60ND08S Datasheet (PDF)

 ..1. Size:405K  ncepower
nce60nd08s.pdfpdf_icon

NCE60ND08S

http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR

 6.1. Size:643K  ncepower
nce60nd03n.pdfpdf_icon

NCE60ND08S

http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

 6.2. Size:659K  ncepower
nce60nd03s.pdfpdf_icon

NCE60ND08S

http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

 6.3. Size:416K  ncepower
nce60nd09as.pdfpdf_icon

NCE60ND08S

NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

Другие MOSFET... NCE60N670K , NCE60N700D , NCE60N700F , NCE60N700I , NCE60N700K , NCE60N700R , NCE60ND03N , NCE60ND03S , IRF9540 , NCE60ND45AG , NCE60ND45XG , NCE60NF019T , NCE60NF031T , NCE60NF040T , NCE60NF055 , NCE60NF055D , NCE60NF055F .

History: BL7N70A-U | CMPFJ176 | LSF65R180GT | IPB160N04S4-H1 | FTK1206 | TPB70R950C | AP9974GS-HF

 

 
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