All MOSFET. NCE60NF019T Datasheet

 

NCE60NF019T Datasheet and Replacement


   Type Designator: NCE60NF019T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 532 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 107 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 184 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 481 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-247
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NCE60NF019T Datasheet (PDF)

 ..1. Size:891K  ncepower
 nce60nf019t.pdf pdf_icon

NCE60NF019T

NCE60NF019TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 17 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 107 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 184 nCSMPS requirements for PF

 6.1. Size:929K  ncepower
 nce60nf040t.pdf pdf_icon

NCE60NF019T

NCE60NF040TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 35 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 61 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 87 nCSMPS requirements for PFC,

 6.2. Size:789K  ncepower
 nce60nf080f.pdf pdf_icon

NCE60NF019T

NCE60NF080FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 6.3. Size:763K  ncepower
 nce60nf080.pdf pdf_icon

NCE60NF019T

NCE60NF080N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industrial

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