NCE60NF019T. Аналоги и основные параметры
Наименование производителя: NCE60NF019T
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 532 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 107 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 481 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
Тип корпуса: TO-247
Аналог (замена) для NCE60NF019T
- подборⓘ MOSFET транзистора по параметрам
NCE60NF019T даташит
nce60nf019t.pdf
NCE60NF019T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 17 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 107 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 184 nC SMPS requirements for PF
nce60nf040t.pdf
NCE60NF040T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 35 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 61 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 87 nC SMPS requirements for PFC,
nce60nf080f.pdf
NCE60NF080F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria
nce60nf080.pdf
NCE60NF080 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industrial
Другие IGBT... NCE60N700I, NCE60N700K, NCE60N700R, NCE60ND03N, NCE60ND03S, NCE60ND08S, NCE60ND45AG, NCE60ND45XG, 7N65, NCE60NF031T, NCE60NF040T, NCE60NF055, NCE60NF055D, NCE60NF055F, NCE60NF055T, NCE60NF080, NCE60NF080D
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Список транзисторов
Обновления
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