NCE60NF160V Specs and Replacement

Type Designator: NCE60NF160V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 194 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: DFN8X8

NCE60NF160V substitution

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NCE60NF160V datasheet

 ..1. Size:703K  ncepower
 nce60nf160v.pdf pdf_icon

NCE60NF160V

NCE60NF160V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri... See More ⇒

 4.1. Size:658K  ncepower
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NCE60NF160V

NCE60NF160K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri... See More ⇒

 4.2. Size:808K  ncepower
 nce60nf160t.pdf pdf_icon

NCE60NF160V

NCE60NF160T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri... See More ⇒

 6.1. Size:568K  ncepower
 nce60nf110.pdf pdf_icon

NCE60NF160V

NCE60NF110 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 95 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 29 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC/... See More ⇒

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Detailed specifications: NCE60NF080, NCE60NF080D, NCE60NF080F, NCE60NF080T, NCE60NF110, NCE60NF110F, NCE60NF160K, NCE60NF160T, SPP20N60C3, NCE60NF200, NCE60NF200D, NCE60NF200F, NCE60NF200I, NCE60NF200K, NCE60NF260, NCE60NF260D, NCE60NF260F

Keywords - NCE60NF160V MOSFET specs

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