All MOSFET. NCE60NF160V Datasheet

 

NCE60NF160V Datasheet and Replacement


   Type Designator: NCE60NF160V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 194 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: DFN8X8
 

 NCE60NF160V substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE60NF160V Datasheet (PDF)

 ..1. Size:703K  ncepower
 nce60nf160v.pdf pdf_icon

NCE60NF160V

NCE60NF160VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

 4.1. Size:658K  ncepower
 nce60nf160k.pdf pdf_icon

NCE60NF160V

NCE60NF160KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

 4.2. Size:808K  ncepower
 nce60nf160t.pdf pdf_icon

NCE60NF160V

NCE60NF160TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

 6.1. Size:568K  ncepower
 nce60nf110.pdf pdf_icon

NCE60NF160V

NCE60NF110N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 95 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 29 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC/

SHOW MORE

Datasheet: NCE60NF080 , NCE60NF080D , NCE60NF080F , NCE60NF080T , NCE60NF110 , NCE60NF110F , NCE60NF160K , NCE60NF160T , AON7410 , NCE60NF200 , NCE60NF200D , NCE60NF200F , NCE60NF200I , NCE60NF200K , NCE60NF260 , NCE60NF260D , NCE60NF260F .

History: RJK1206JPD | TPCS8303 | AOLF66610 | 2SK673 | TPCA8049-H | 2SJ324-Z | S-LBSS138LT1G

Keywords - NCE60NF160V MOSFET datasheet

 NCE60NF160V cross reference
 NCE60NF160V equivalent finder
 NCE60NF160V lookup
 NCE60NF160V substitution
 NCE60NF160V replacement

 

 
Back to Top

 


 
.