NCE60NF160V. Аналоги и основные параметры

Наименование производителя: NCE60NF160V

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 194 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 18 ns

Cossⓘ - Выходная емкость: 50 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm

Тип корпуса: DFN8X8

Аналог (замена) для NCE60NF160V

- подборⓘ MOSFET транзистора по параметрам

 

NCE60NF160V даташит

 ..1. Size:703K  ncepower
 nce60nf160v.pdf pdf_icon

NCE60NF160V

NCE60NF160V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri

 4.1. Size:658K  ncepower
 nce60nf160k.pdf pdf_icon

NCE60NF160V

NCE60NF160K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri

 4.2. Size:808K  ncepower
 nce60nf160t.pdf pdf_icon

NCE60NF160V

NCE60NF160T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri

 6.1. Size:568K  ncepower
 nce60nf110.pdf pdf_icon

NCE60NF160V

NCE60NF110 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 95 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 29 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC/

ПОКАЗАТЬ ЕЩЁ

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