NCE60NF160V - аналоги и даташиты транзистора

 

NCE60NF160V - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCE60NF160V
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 194 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: DFN8X8
 

 Аналог (замена) для NCE60NF160V

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60NF160V Datasheet (PDF)

 ..1. Size:703K  ncepower
 nce60nf160v.pdf pdf_icon

NCE60NF160V

NCE60NF160VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

 4.1. Size:658K  ncepower
 nce60nf160k.pdf pdf_icon

NCE60NF160V

NCE60NF160KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

 4.2. Size:808K  ncepower
 nce60nf160t.pdf pdf_icon

NCE60NF160V

NCE60NF160TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

 6.1. Size:568K  ncepower
 nce60nf110.pdf pdf_icon

NCE60NF160V

NCE60NF110N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 95 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 29 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC/

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60NF080 , NCE60NF080D , NCE60NF080F , NCE60NF080T , NCE60NF110 , NCE60NF110F , NCE60NF160K , NCE60NF160T , IRF9540N , NCE60NF200 , NCE60NF200D , NCE60NF200F , NCE60NF200I , NCE60NF200K , NCE60NF260 , NCE60NF260D , NCE60NF260F .

History: SI7463ADP | FDWS86369-F085 | FMP12N60ES | AON7548 | IPP60R385CP | FDS8984-F085 | 9N90L-TF1-T

 

 
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