FQA8N100C MOSFET Datasheet: N-Ch, 1000V, 8A. Full specification with pinout and replacement list

FQA8N100C Specs and Replacement

   Type Designator: FQA8N100C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO3PN

FQA8N100C substitution

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FQA8N100C datasheet

..1. Size:460K fairchild semi
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September 2005 QFET FQA8N100C 1000V N-Channel MOSFET Features Description 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 53 nC) DMOS technology. Low Crss (typical 16 pF) This advanced technology has been especially tailored ... See More ⇒

..2. Size:210K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQA8N100C FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒

9.1. Size:807K fairchild semi
fqa8n90c f109.pdf pdf_icon

November 2007 QFET FQA8N90C_F109 900V N-Channel MOSFET Features Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to... See More ⇒

9.2. Size:690K fairchild semi
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TM QFET FQA8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast s... See More ⇒