FQA8N100C Datasheet. Specs and Replacement

Type Designator: FQA8N100C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm

Package: TO3PN

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FQA8N100C datasheet

 ..1. Size:460K  fairchild semi
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FQA8N100C

September 2005 QFET FQA8N100C 1000V N-Channel MOSFET Features Description 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 53 nC) DMOS technology. Low Crss (typical 16 pF) This advanced technology has been especially tailored ... See More ⇒

 ..2. Size:210K  inchange semiconductor
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FQA8N100C

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQA8N100C FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒

 9.1. Size:807K  fairchild semi
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FQA8N100C

November 2007 QFET FQA8N90C_F109 900V N-Channel MOSFET Features Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to... See More ⇒

 9.2. Size:690K  fairchild semi
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FQA8N100C

TM QFET FQA8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast s... See More ⇒

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Detailed specifications: FQA65N20, SDF05N40T, FQA6N90CF109, FQA70N10, SDF04N65, FQA70N15, FQA7N80CF109, SDF04N60, IRF730, FQA8N90CF109, FQA90N08, FQA90N15, FQA90N15F109, FQA9N90F109, FQA9N90CF109, FQA9P25, FQAF11N90C

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