NCE60P16AQ Specs and Replacement
Type Designator: NCE60P16AQ
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 93.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: DFN3.3X3.3-8L
NCE60P16AQ substitution
- MOSFET ⓘ Cross-Reference Search
NCE60P16AQ datasheet
nce60p16aq.pdf
http //www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS D or power management. R ... See More ⇒
nce60p18aq.pdf
NCE60P18AQ http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features Description V = -60V,I = -18A DS D The NCE60P18AQ uses advanced trench technology to provide R ... See More ⇒
Detailed specifications: NCE60P05BY, NCE60P05N, NCE60P05R, NCE60P07AS, NCE60P08AS, NCE60P09AS, NCE60P09K, NCE60P12AS, IRFZ24N, NCE60P17AQ, NCE60P18AQ, NCE60P25, NCE60P28AK, NCE60P40F, NCE60P45AK, NCE60P50G, NCE60P65K
Keywords - NCE60P16AQ MOSFET specs
NCE60P16AQ cross reference
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NCE60P16AQ replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
