NCE60P17AQ Datasheet and Replacement
Type Designator: NCE60P17AQ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 90.6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: DFN3.3X3.3-8L
NCE60P17AQ substitution
NCE60P17AQ Datasheet (PDF)
nce60p17aq.pdf
NCE60P17AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -17ADS DThe NCE60P17AQ uses advanced trench technology to provideR
nce60p16aq.pdf
http://www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS Dor power management. R
nce60p18ak.pdf
Pb Free Producthttp://www.ncepower.com NCE60P18AKNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P18AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-18A RDS(ON)
nce60p18aq.pdf
NCE60P18AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -18ADS DThe NCE60P18AQ uses advanced trench technology to provideR
Datasheet: NCE60P05N , NCE60P05R , NCE60P07AS , NCE60P08AS , NCE60P09AS , NCE60P09K , NCE60P12AS , NCE60P16AQ , 2N60 , NCE60P18AQ , NCE60P25 , NCE60P28AK , NCE60P40F , NCE60P45AK , NCE60P50G , NCE60P65K , NCE60P70D .
Keywords - NCE60P17AQ MOSFET datasheet
NCE60P17AQ cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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