All MOSFET. NCE60P17AQ Datasheet

 

NCE60P17AQ Datasheet and Replacement


   Type Designator: NCE60P17AQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 90.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: DFN3.3X3.3-8L
 

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NCE60P17AQ Datasheet (PDF)

 ..1. Size:711K  ncepower
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NCE60P17AQ

NCE60P17AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -17ADS DThe NCE60P17AQ uses advanced trench technology to provideR

 7.1. Size:410K  ncepower
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NCE60P17AQ

http://www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS Dor power management. R

 7.2. Size:418K  ncepower
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NCE60P17AQ

Pb Free Producthttp://www.ncepower.com NCE60P18AKNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P18AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-18A RDS(ON)

 7.3. Size:624K  ncepower
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NCE60P17AQ

NCE60P18AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -18ADS DThe NCE60P18AQ uses advanced trench technology to provideR

Datasheet: NCE60P05N , NCE60P05R , NCE60P07AS , NCE60P08AS , NCE60P09AS , NCE60P09K , NCE60P12AS , NCE60P16AQ , IRF830 , NCE60P18AQ , NCE60P25 , NCE60P28AK , NCE60P40F , NCE60P45AK , NCE60P50G , NCE60P65K , NCE60P70D .

History: CHT-SNMOS80 | 6N65KL-TA3-T | AP6C072M | SLF12N60C | NTMFS4C029N | MMBF5485 | IPD110N12N3G

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