NCE60P82AD Specs and Replacement

Type Designator: NCE60P82AD

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 82 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 356 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-263

NCE60P82AD substitution

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NCE60P82AD datasheet

 ..1. Size:611K  ncepower
 nce60p82ad.pdf pdf_icon

NCE60P82AD

NCE60P82AD http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AD uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R ... See More ⇒

 5.1. Size:665K  ncepower
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NCE60P82AD

NCE60P82AF http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features V =-60V,I =-41A Description DS D The NCE60P82AF uses advanced trench technology and design R ... See More ⇒

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 nce60p82a.pdf pdf_icon

NCE60P82AD

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 5.3. Size:624K  ncepower
 nce60p82ak.pdf pdf_icon

NCE60P82AD

NCE60P82AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AK uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R ... See More ⇒

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Detailed specifications: NCE60P28AK, NCE60P40F, NCE60P45AK, NCE60P50G, NCE60P65K, NCE60P70D, NCE60P70G, NCE60P82A, IRF830, NCE60P82AK, NCE60PD05S, NCE60T2K2I, NCE60T2K2K, NCE6525Q, NCE65N180, NCE65N180D, NCE65N180F

Keywords - NCE60P82AD MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs