NCE65N180V Specs and Replacement

Type Designator: NCE65N180V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 194 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: DFN8X8

NCE65N180V substitution

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NCE65N180V datasheet

 ..1. Size:651K  ncepower
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NCE65N180V

NCE65N180V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industria... See More ⇒

 5.1. Size:670K  ncepower
 nce65n180.pdf pdf_icon

NCE65N180V

NCE65N180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industrial... See More ⇒

 5.2. Size:864K  ncepower
 nce65n180t.pdf pdf_icon

NCE65N180V

NCE65N180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr... See More ⇒

 5.3. Size:717K  ncepower
 nce65n180f.pdf pdf_icon

NCE65N180V

NCE65N180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr... See More ⇒

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Detailed specifications: NCE60T2K2I, NCE60T2K2K, NCE6525Q, NCE65N180, NCE65N180D, NCE65N180F, NCE65N180K, NCE65N180T, 60N06, NCE65N1K2D, NCE65N1K2F, NCE65N1K2I, NCE65N1K2K, NCE65N1K2R, NCE65N230, NCE65N230D, NCE65N230F

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