NCE65N180V - описание и поиск аналогов

 

Аналоги NCE65N180V. Основные параметры


   Наименование производителя: NCE65N180V
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 194 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: DFN8X8
 

 Аналог (замена) для NCE65N180V

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65N180V даташит

 ..1. Size:651K  ncepower
 nce65n180v.pdf pdf_icon

NCE65N180V

NCE65N180V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industria

 5.1. Size:670K  ncepower
 nce65n180.pdf pdf_icon

NCE65N180V

NCE65N180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industrial

 5.2. Size:864K  ncepower
 nce65n180t.pdf pdf_icon

NCE65N180V

NCE65N180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr

 5.3. Size:717K  ncepower
 nce65n180f.pdf pdf_icon

NCE65N180V

NCE65N180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60T2K2I , NCE60T2K2K , NCE6525Q , NCE65N180 , NCE65N180D , NCE65N180F , NCE65N180K , NCE65N180T , 60N06 , NCE65N1K2D , NCE65N1K2F , NCE65N1K2I , NCE65N1K2K , NCE65N1K2R , NCE65N230 , NCE65N230D , NCE65N230F .

History: AGM10N15R | KMD4D5P30XA

 

 
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