All MOSFET. NCE65N1K2D Datasheet

 

NCE65N1K2D Datasheet and Replacement


   Type Designator: NCE65N1K2D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO263
 

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NCE65N1K2D Datasheet (PDF)

 ..1. Size:792K  ncepower
 nce65n1k2d.pdf pdf_icon

NCE65N1K2D

NCE65N1K2DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 5.1. Size:802K  ncepower
 nce65n1k2f.pdf pdf_icon

NCE65N1K2D

NCE65N1K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 5.2. Size:819K  ncepower
 nce65n1k2r.pdf pdf_icon

NCE65N1K2D

NCE65N1K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 5.3. Size:795K  ncepower
 nce65n1k2k.pdf pdf_icon

NCE65N1K2D

NCE65N1K2KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

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Datasheet: NCE60T2K2K , NCE6525Q , NCE65N180 , NCE65N180D , NCE65N180F , NCE65N180K , NCE65N180T , NCE65N180V , 5N50 , NCE65N1K2F , NCE65N1K2I , NCE65N1K2K , NCE65N1K2R , NCE65N230 , NCE65N230D , NCE65N230F , NCE65N230I .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - NCE65N1K2D MOSFET datasheet

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