NCE65N1K2D. Аналоги и основные параметры

Наименование производителя: NCE65N1K2D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 46 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.8 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 12 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm

Тип корпуса: TO263

Аналог (замена) для NCE65N1K2D

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N1K2D даташит

 ..1. Size:792K  ncepower
 nce65n1k2d.pdf pdf_icon

NCE65N1K2D

NCE65N1K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 5.1. Size:802K  ncepower
 nce65n1k2f.pdf pdf_icon

NCE65N1K2D

NCE65N1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 5.2. Size:819K  ncepower
 nce65n1k2r.pdf pdf_icon

NCE65N1K2D

NCE65N1K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 5.3. Size:795K  ncepower
 nce65n1k2k.pdf pdf_icon

NCE65N1K2D

NCE65N1K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

ПОКАЗАТЬ ЕЩЁ

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