NCE65N1K2I Specs and Replacement

Type Designator: NCE65N1K2I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-251

NCE65N1K2I substitution

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NCE65N1K2I datasheet

 ..1. Size:793K  ncepower
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NCE65N1K2I

NCE65N1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu... See More ⇒

 5.1. Size:802K  ncepower
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NCE65N1K2I

NCE65N1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu... See More ⇒

 5.2. Size:819K  ncepower
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NCE65N1K2I

NCE65N1K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu... See More ⇒

 5.3. Size:792K  ncepower
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NCE65N1K2I

NCE65N1K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu... See More ⇒

Detailed specifications: NCE65N180, NCE65N180D, NCE65N180F, NCE65N180K, NCE65N180T, NCE65N180V, NCE65N1K2D, NCE65N1K2F, IRF730, NCE65N1K2K, NCE65N1K2R, NCE65N230, NCE65N230D, NCE65N230F, NCE65N230I, NCE65N230K, NCE65N260

Keywords - NCE65N1K2I MOSFET specs

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