NCE65N1K2I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65N1K2I
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 46 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 3.8 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 10 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 12 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
Тип корпуса: TO-251
Аналог (замена) для NCE65N1K2I
NCE65N1K2I Datasheet (PDF)
nce65n1k2i.pdf
NCE65N1K2IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce65n1k2f.pdf
NCE65N1K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce65n1k2r.pdf
NCE65N1K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce65n1k2d.pdf
NCE65N1K2DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce65n1k2k.pdf
NCE65N1K2KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: NCE60N700I
