Справочник MOSFET. NCE65N1K2I

 

NCE65N1K2I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N1K2I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 12 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для NCE65N1K2I

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65N1K2I Datasheet (PDF)

 ..1. Size:793K  ncepower
 nce65n1k2i.pdf pdf_icon

NCE65N1K2I

NCE65N1K2IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 5.1. Size:802K  ncepower
 nce65n1k2f.pdf pdf_icon

NCE65N1K2I

NCE65N1K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 5.2. Size:819K  ncepower
 nce65n1k2r.pdf pdf_icon

NCE65N1K2I

NCE65N1K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 5.3. Size:792K  ncepower
 nce65n1k2d.pdf pdf_icon

NCE65N1K2I

NCE65N1K2DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE65N180 , NCE65N180D , NCE65N180F , NCE65N180K , NCE65N180T , NCE65N180V , NCE65N1K2D , NCE65N1K2F , BS170 , NCE65N1K2K , NCE65N1K2R , NCE65N230 , NCE65N230D , NCE65N230F , NCE65N230I , NCE65N230K , NCE65N260 .

History: AP2318BEN | DCC016M120G2 | HFS640 | HY1303C | PMZ370UNE | AK4N60S | GT045N10T

 

 
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