All MOSFET. NCE65N260D Datasheet

 

NCE65N260D MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE65N260D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   Rise Time (tr): 9 nS
   Drain-Source Capacitance (Cd): 40 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm
   Package: TO-263

 NCE65N260D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE65N260D Datasheet (PDF)

 ..1. Size:713K  ncepower
nce65n260d.pdf

NCE65N260D
NCE65N260D

NCE65N260DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

 5.1. Size:690K  ncepower
nce65n260f.pdf

NCE65N260D
NCE65N260D

NCE65N260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

 5.2. Size:728K  ncepower
nce65n260.pdf

NCE65N260D
NCE65N260D

NCE65N260N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industri

 5.3. Size:736K  ncepower
nce65n260i.pdf

NCE65N260D
NCE65N260D

NCE65N260IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

 5.4. Size:720K  ncepower
nce65n260k.pdf

NCE65N260D
NCE65N260D

NCE65N260KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCE60NF200D

 

 
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