Справочник MOSFET. NCE65N260D

 

NCE65N260D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE65N260D
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 142 W
   Предельно допустимое напряжение сток-исток |Uds|: 650 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 14.5 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 22 nC
   Время нарастания (tr): 9 ns
   Выходная емкость (Cd): 40 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.26 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для NCE65N260D

 

 

NCE65N260D Datasheet (PDF)

 ..1. Size:713K  ncepower
nce65n260d.pdf

NCE65N260D
NCE65N260D

NCE65N260DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

 5.1. Size:690K  ncepower
nce65n260f.pdf

NCE65N260D
NCE65N260D

NCE65N260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

 5.2. Size:728K  ncepower
nce65n260.pdf

NCE65N260D
NCE65N260D

NCE65N260N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industri

 5.3. Size:736K  ncepower
nce65n260i.pdf

NCE65N260D
NCE65N260D

NCE65N260IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

 5.4. Size:720K  ncepower
nce65n260k.pdf

NCE65N260D
NCE65N260D

NCE65N260KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

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History: NCE65N230D | STB24N60DM2

 

 
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