All MOSFET. FQA9N90F109 Datasheet

 

FQA9N90F109 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQA9N90F109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO3PN

 FQA9N90F109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA9N90F109 Datasheet (PDF)

 7.1. Size:799K  fairchild semi
 fqa9n90c.pdf

FQA9N90F109 FQA9N90F109

July 2007 QFETFQA9N90C 900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to Fa

 7.2. Size:804K  fairchild semi
 fqa9n90c f109.pdf

FQA9N90F109 FQA9N90F109

July 2007 QFETFQA9N90C_F109900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to

 7.3. Size:1054K  fairchild semi
 fqa9n90 f109.pdf

FQA9N90F109 FQA9N90F109

April 2013FQA9N90_F109N-Channel QFET MOSFET900 V, 8.6 A, 1.3 Features Description 8.6 A, 900 V, RDS(on) = 1.3 (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 55 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 25 pF)techn

 7.4. Size:2910K  onsemi
 fqa9n90c f109.pdf

FQA9N90F109 FQA9N90F109

April 2014FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Features Description 9 A, 900 V, RDS(on) = 1.4 (Max.) @ VGS = 10 V, ID = 4.5 AThis N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 45 nC)stripe and DMOS technology. This advanced MOSFET Low Crss . 14 pF)technology

 7.5. Size:1104K  onsemi
 fqa9n90 f109.pdf

FQA9N90F109 FQA9N90F109

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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