FQA9N90F109
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQA9N90F109
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 240
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 8.6
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 55
nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.3
Ohm
Тип корпуса:
TO3PN
Аналог (замена) для FQA9N90F109
FQA9N90F109
Datasheet (PDF)
7.1. Size:799K fairchild semi
fqa9n90c.pdf 
July 2007 QFETFQA9N90C 900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to Fa
7.2. Size:804K fairchild semi
fqa9n90c f109.pdf 
July 2007 QFETFQA9N90C_F109900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to
7.3. Size:1054K fairchild semi
fqa9n90 f109.pdf 
April 2013FQA9N90_F109N-Channel QFET MOSFET900 V, 8.6 A, 1.3 Features Description 8.6 A, 900 V, RDS(on) = 1.3 (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 55 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 25 pF)techn
7.4. Size:2910K onsemi
fqa9n90c f109.pdf 
April 2014FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Features Description 9 A, 900 V, RDS(on) = 1.4 (Max.) @ VGS = 10 V, ID = 4.5 AThis N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 45 nC)stripe and DMOS technology. This advanced MOSFET Low Crss . 14 pF)technology
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