FQA9N90CF109 PDF and Equivalents Search

 

FQA9N90CF109 Specs and Replacement

Type Designator: FQA9N90CF109

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO3PN

FQA9N90CF109 substitution

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FQA9N90CF109 datasheet

 6.1. Size:799K  fairchild semi
 fqa9n90c.pdf pdf_icon

FQA9N90CF109

July 2007 QFET FQA9N90C 900V N-Channel MOSFET Features Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to Fa... See More ⇒

 6.2. Size:804K  fairchild semi
 fqa9n90c f109.pdf pdf_icon

FQA9N90CF109

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 6.3. Size:2910K  onsemi
 fqa9n90c f109.pdf pdf_icon

FQA9N90CF109

April 2014 FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Features Description 9 A, 900 V, RDS(on) = 1.4 (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar Low Gate Charge (Typ. 45 nC) stripe and DMOS technology. This advanced MOSFET Low Crss . 14 pF) technology... See More ⇒

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Detailed specifications: FQA7N80CF109, SDF04N60, FQA8N100C, FQA8N90CF109, FQA90N08, FQA90N15, FQA90N15F109, FQA9N90F109, IRFZ48N, FQA9P25, FQAF11N90C, FQAF13N80, SDD06N70, FQAF16N50, FQB11P06, FQB12P20, FQB19N20

Keywords - FQA9N90CF109 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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