NCE65N800R Specs and Replacement

Type Designator: NCE65N800R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: SOT223

NCE65N800R substitution

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NCE65N800R datasheet

 ..1. Size:817K  ncepower
 nce65n800r.pdf pdf_icon

NCE65N800R

NCE65N800R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu... See More ⇒

 5.1. Size:816K  ncepower
 nce65n800d.pdf pdf_icon

NCE65N800R

NCE65N800D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu... See More ⇒

 5.2. Size:786K  ncepower
 nce65n800k.pdf pdf_icon

NCE65N800R

NCE65N800K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu... See More ⇒

 5.3. Size:798K  ncepower
 nce65n800f.pdf pdf_icon

NCE65N800R

NCE65N800F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu... See More ⇒

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Detailed specifications: NCE65N760D, NCE65N760F, NCE65N760I, NCE65N760K, NCE65N800D, NCE65N800F, NCE65N800I, NCE65N800K, K4145, NCE65N900, NCE65N900D, NCE65N900F, NCE65N900I, NCE65N900K, NCE65N900R, NCE65NF023T, NCE65NF023T4

Keywords - NCE65N800R MOSFET specs

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