All MOSFET. NCE65N800R Datasheet

 

NCE65N800R Datasheet and Replacement


   Type Designator: NCE65N800R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SOT223
 

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NCE65N800R Datasheet (PDF)

 ..1. Size:817K  ncepower
 nce65n800r.pdf pdf_icon

NCE65N800R

NCE65N800RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.1. Size:816K  ncepower
 nce65n800d.pdf pdf_icon

NCE65N800R

NCE65N800DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.2. Size:786K  ncepower
 nce65n800k.pdf pdf_icon

NCE65N800R

NCE65N800KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.3. Size:798K  ncepower
 nce65n800f.pdf pdf_icon

NCE65N800R

NCE65N800FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

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Datasheet: NCE65N760D , NCE65N760F , NCE65N760I , NCE65N760K , NCE65N800D , NCE65N800F , NCE65N800I , NCE65N800K , IRFB3607 , NCE65N900 , NCE65N900D , NCE65N900F , NCE65N900I , NCE65N900K , NCE65N900R , NCE65NF023T , NCE65NF023T4 .

History: NX7002BK | IPT026N10N5

Keywords - NCE65N800R MOSFET datasheet

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