NCE65N800R. Аналоги и основные параметры

Наименование производителя: NCE65N800R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 5.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 18 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm

Тип корпуса: SOT223

Аналог (замена) для NCE65N800R

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N800R даташит

 ..1. Size:817K  ncepower
 nce65n800r.pdf pdf_icon

NCE65N800R

NCE65N800R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu

 5.1. Size:816K  ncepower
 nce65n800d.pdf pdf_icon

NCE65N800R

NCE65N800D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu

 5.2. Size:786K  ncepower
 nce65n800k.pdf pdf_icon

NCE65N800R

NCE65N800K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu

 5.3. Size:798K  ncepower
 nce65n800f.pdf pdf_icon

NCE65N800R

NCE65N800F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65N760D, NCE65N760F, NCE65N760I, NCE65N760K, NCE65N800D, NCE65N800F, NCE65N800I, NCE65N800K, K4145, NCE65N900, NCE65N900D, NCE65N900F, NCE65N900I, NCE65N900K, NCE65N900R, NCE65NF023T, NCE65NF023T4