Справочник MOSFET. NCE65N800R

 

NCE65N800R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N800R
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 5.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 18 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для NCE65N800R

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65N800R Datasheet (PDF)

 ..1. Size:817K  ncepower
nce65n800r.pdfpdf_icon

NCE65N800R

NCE65N800RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.1. Size:816K  ncepower
nce65n800d.pdfpdf_icon

NCE65N800R

NCE65N800DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.2. Size:786K  ncepower
nce65n800k.pdfpdf_icon

NCE65N800R

NCE65N800KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.3. Size:798K  ncepower
nce65n800f.pdfpdf_icon

NCE65N800R

NCE65N800FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

Другие MOSFET... NCE65N760D , NCE65N760F , NCE65N760I , NCE65N760K , NCE65N800D , NCE65N800F , NCE65N800I , NCE65N800K , IRFB3607 , NCE65N900 , NCE65N900D , NCE65N900F , NCE65N900I , NCE65N900K , NCE65N900R , NCE65NF023T , NCE65NF023T4 .

History: CTD03N003 | AP4575GM-HF | LSE65R099GF | SSM3K03FE | CM8N80F | AP3700M

 

 
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