All MOSFET. NCE65NF023T Datasheet

 

NCE65NF023T Datasheet and Replacement


   Type Designator: NCE65NF023T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 530 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 96 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 386 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-247
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NCE65NF023T Datasheet (PDF)

 ..1. Size:912K  ncepower
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NCE65NF023T

NCE65NF023TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 21 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 96 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 183 nCSMPS requirements for PFC

 0.1. Size:782K  ncepower
nce65nf023t4.pdf pdf_icon

NCE65NF023T

NCE65NF023T4N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 21 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 96 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 183 nCSMPS requirements for PF

 6.1. Size:856K  ncepower
nce65nf099t.pdf pdf_icon

NCE65NF023T

NCE65NF099TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

 6.2. Size:726K  ncepower
nce65nf099ll.pdf pdf_icon

NCE65NF023T

NCE65NF099LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FS10AS-06 | WSD30L30DN | DMTH10H010LCT | SVS60R190TD4 | IPI47N10S-33 | IRFU3709 | IRFZ48RS

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