NCE65NF023T. Аналоги и основные параметры

Наименование производителя: NCE65NF023T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 530 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 96 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 22 ns

Cossⓘ - Выходная емкость: 386 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm

Тип корпуса: TO-247

Аналог (замена) для NCE65NF023T

- подборⓘ MOSFET транзистора по параметрам

 

NCE65NF023T даташит

 ..1. Size:912K  ncepower
nce65nf023t.pdfpdf_icon

NCE65NF023T

NCE65NF023T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 21 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 96 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 183 nC SMPS requirements for PFC

 0.1. Size:782K  ncepower
nce65nf023t4.pdfpdf_icon

NCE65NF023T

NCE65NF023T4 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 21 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 96 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 183 nC SMPS requirements for PF

 6.1. Size:856K  ncepower
nce65nf099t.pdfpdf_icon

NCE65NF023T

NCE65NF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

 6.2. Size:726K  ncepower
nce65nf099ll.pdfpdf_icon

NCE65NF023T

NCE65NF099LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, A

Другие IGBT... NCE65N800K, NCE65N800R, NCE65N900, NCE65N900D, NCE65N900F, NCE65N900I, NCE65N900K, NCE65N900R, AON6380, NCE65NF023T4, NCE65NF036T, NCE65NF036T4, NCE65NF050T, NCE65NF068, NCE65NF068D, NCE65NF068F, NCE65NF068LL