All MOSFET. NCE65NF099T Datasheet

 

NCE65NF099T Datasheet and Replacement


   Type Designator: NCE65NF099T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 346 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO-247
 

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NCE65NF099T Datasheet (PDF)

 ..1. Size:856K  ncepower
 nce65nf099t.pdf pdf_icon

NCE65NF099T

NCE65NF099TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

 4.1. Size:726K  ncepower
 nce65nf099ll.pdf pdf_icon

NCE65NF099T

NCE65NF099LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, A

 4.2. Size:709K  ncepower
 nce65nf099d.pdf pdf_icon

NCE65NF099T

NCE65NF099DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

 4.3. Size:709K  ncepower
 nce65nf099v.pdf pdf_icon

NCE65NF099T

NCE65NF099VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

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Datasheet: NCE65NF068F , NCE65NF068LL , NCE65NF068T , NCE65NF068V , NCE65NF099 , NCE65NF099D , NCE65NF099F , NCE65NF099LL , 13N50 , NCE65NF099V , NCE65NF190 , NCE65NF190D , NCE65NF190F , NCE65NF190K , NCE65NF190LL , NCE65NF190T , NCE65NF190V .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

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